Direct current performance and current collapse in...

Semiconductor Science and Technology 2012 / 12 Vol. 27; Iss. 12

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO 2 gate dielectric

Lachab, M, Sultana, M, Fatima, H, Adivarahan, V, Fareed, Q, Khan, M A
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Volume:
27
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/27/12/125001
Date:
December, 2012
File:
PDF, 720 KB
english, 2012
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