[IEEE IEEE International Electron Devices Meeting 2003 -...

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - New compact model for induced gate current noise [MOSFET]

van Langevelde, R., Paasschens, J.C.J., Scholten, A.J., Havens, R.J., Tiemeijer, L.F., Klaassen, D.B.M.

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Year:

2003

Language:

english

DOI:

10.1109/iedm.2003.1269416

File:

PDF, 238 KB

english, 2003

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