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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Reliability analysis of a new vertical MOSFET with bMPI structure for 1T-DRAM applications
Chen, Cheng-Hsin, Lin, Jyi-Tsong, Lin, Po-Hsieh, Eng, Yi-Chuen, Chiu, Hsien-Nan, Chang, Tzu-Feng, Chen, Hsuan-HsuYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667297
File:
PDF, 617 KB
english, 2010