First-principle calculation on the defect energy level of carbon vacancy in 4H—SiC
Ren-Xu, Jia, Yu-Ming, Zhang, Yi-Men, ZhangVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/10/107105
Date:
October, 2010
File:
PDF, 486 KB
english, 2010