[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Characteristics of sub-100nm ferroelectric field effect transistor with high-k buffer layer
Rui Jin,, Yuncheng Song,, Min Ji,, Honghua Xu,, Jinfeng Kang,, Ruqi Han,, Xiaoyan Liu,Year:
2008
Language:
english
DOI:
10.1109/icsict.2008.4734676
File:
PDF, 821 KB
english, 2008