Microscopic mechanisms behind the high mobility in rubrene...

Physical Review B 2011 / 2 Vol. 83; Iss. 7

Microscopic mechanisms behind the high mobility in rubrene single-crystal transistors as revealed by field-induced electron spin resonance

Marumoto, Kazuhiro, Arai, Norimichi, Goto, Hiromasa, Kijima, Masashi, Murakami, Kouichi, Tominari, Yukihiro, Takeya, Jun, Shimoi, Yukihiro, Tanaka, Hisaaki, Kuroda, Shin-ichi, Kaji, Toshihiko, Nishika
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Volume:
83
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.83.075302
Date:
February, 2011
File:
PDF, 329 KB
english, 2011
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