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[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides
Redwing, J.M., Acord, J.D., Manning, I., Raghavan, S., Weng, X., Dickey, E.C., Snyder, D.W.Year:
2007
Language:
english
DOI:
10.1109/isdrs.2007.4422504
File:
PDF, 316 KB
english, 2007