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Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy
R. Köhrbrück, S. Munnix, D. Bimberg, D. E. Mars, J. N. MillerYear:
1990
Language:
english
DOI:
10.1063/1.103554
File:
PDF, 624 KB
english, 1990