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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs
Tiwari, Pramod Kumar, Dubey, Sarvesh, Jit, S.Year:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667663
File:
PDF, 326 KB
english, 2010