Effect of Nh3/SiH4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin Film Transistors
Murthy, R.V.R., Ma, Q., Nathan, A., Chamberlain, S.G.Volume:
507
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-507-73
Date:
January, 1998
File:
PDF, 399 KB
english, 1998