[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of +0.5 V
Ketteniss, Nico, Reuters, Benjamin, Hollander, Bernhard, Hahn, Herwig, Kalisch, Holger, Vescan, AndreiYear:
2012
Language:
english
DOI:
10.1109/drc.2012.6257030
File:
PDF, 791 KB
english, 2012