Observation by electroabsorption of strain-enhanced interface roughening in GaxIn1−xAs/Ga0.22In0.78As0.48P0.52 quantum wells prepared by gas-source molecular beam epitaxy
Simes, R. J., Starck, C., Weihofen, R., Weiser, G.Volume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354417
File:
PDF, 743 KB
english, 1993