Strain reduction and crystal improvement of an InGaN/GaN...

Applied Physics Letters 2013 Vol. 103; Iss. 14

Strain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate

Chen, Chih-Yen, Hui Liu, Zhan, Lin, Chun-Han, Su, Chia-Ying, Chang, Ta-Wei, Shih, Pei-Ying, Chen, Horng-Shyang, Liao, Che-Hao, Hsieh, Chieh, Chou, Wang-Hsien, Shen, Chen-Hung, Kiang, Yean-Woei, Yang,
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Volume:
103
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4824351
File:
PDF, 1.01 MB
english, 2013
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