[IEEE 2013 IEEE International Electron Devices Meeting...

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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

Bijesh, R., Liu, H., Madan, H., Mohata, D., Li, W., Nguyen, N. V, Gundlach, D., Richter, C. A., Maier, J., Wang, K., Clarke, T., Fastenau, J. M., Loubychev, D., Liu, W. K., Narayanan, V, Datta, S.
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Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724708
File:
PDF, 969 KB
english, 2013
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