Isolated arsenic-antisite defect in GaAs and the properties...

Isolated arsenic-antisite defect in GaAs and the properties of EL 2

Dabrowski, Jaroslaw, Scheffler, Matthias
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Volume:
40
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.40.10391
Date:
November, 1989
File:
PDF, 647 KB
english, 1989
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