Strain relief during Ge hut cluster formation on Si(001)...

Physical Review B 2004 / 12 Vol. 70; Iss. 23

Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection

Horn-von Hoegen, M., Müller, B. H., Grabosch, T., Kury, P.
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Volume:
70
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.70.235313
Date:
December, 2004
File:
PDF, 1.01 MB
english, 2004
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