Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors
Chang, C. Y., Wang, Yu-Lin, Gila, B. P., Gerger, A. P., Pearton, S. J., Lo, C. F., Ren, F., Sun, Q., Zhang, Yu., Han, J.Volume:
95
Year:
2009
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3216576
File:
PDF, 571 KB
english, 2009