[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - 22 nm technology compatible fully functional 0.1 μm2 6T-SRAM cell
Haran, B. S., Kumar, A., Adam, L., Chang, J., Basker, V., Kanakasabapathy, S., Horak, D., Fan, S., Chen, J., Faltermeier, J., Seo, S., Burkhardt, M., Burns, S., Halle, S., Holmes, S., Johnson, R., McLYear:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796769
File:
PDF, 2.48 MB
english, 2008