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Lateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy
Hara, Naoki, Shiina, Kazushige, Ohori, Tatsuya, Kasai, Kazumi, Komeno, JunjiVolume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354912
File:
PDF, 678 KB
english, 1993