Electrical properties and grain size of phosphorus in situ...

Electrical properties and grain size of phosphorus in situ doped and cw laser annealed polycrystalline silicon films

Ternisien d’Ouville, T.
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Volume:
53
Year:
1982
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.331341
File:
PDF, 752 KB
english, 1982
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