High-efficiency 1.3 μm InGaAs∕GaAs quantum-dot microcavity...

Applied Physics Letters 2005 Vol. 86; Iss. 15

High-efficiency 1.3 μm InGaAs∕GaAs quantum-dot microcavity light-emitting diodes grown by metalorganic chemical vapor deposition

Todaro, M. T., Tasco, V., De Giorgi, M., Martiradonna, L., Rainò, G., De Vittorio, M., Passaseo, A., Cingolani, R.
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Volume:
86
Year:
2005
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1898440
File:
PDF, 372 KB
english, 2005
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