18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)
Bhattacharya, Raghu N., Contreras, Miguel A., Teeter, GlennVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.l1475
Date:
October, 2004
File:
PDF, 99 KB
english, 2004