Atomic profiles and electrical characteristics of very high energy (8–20 MeV) Si implants in GaAs
Thompson, Phillip E., Dietrich, Harry B., Eridon, James M.Volume:
67
Year:
1990
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.345701
File:
PDF, 635 KB
english, 1990