Single-Event Latchup Modeling Based on Coupled Physical and...

IEEE Transactions on Nuclear Science 2014 / 12 Vol. 61; Iss. 6

Single-Event Latchup Modeling Based on Coupled Physical and Electrical Transient Simulations in CMOS Technology

Artola, L., Hubert, G., Rousselin, T.
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2014.2362857
Date:
December, 2014
File:
PDF, 950 KB
english, 2014
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