![](/img/cover-not-exists.png)
Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p -type Ge
Watanabe, Michio, Itoh, Kohei M., Ootuka, Youiti, Haller, Eugene E.Volume:
62
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.62.R2255
Date:
July, 2000
File:
PDF, 68 KB
english, 2000