Characterization of deep-level defects in GaAs irradiated...

Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons

Lai, S. T., Nener, B. D., Faraone, L., Nassibian, A. G., Hotchkis, M. A. C.

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Volume:

Year:

1993

Language:

english

Journal:

Journal of Applied Physics

DOI:

10.1063/1.353375

File:

PDF, 1.16 MB

english, 1993

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