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Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons
Lai, S. T., Nener, B. D., Faraone, L., Nassibian, A. G., Hotchkis, M. A. C.Volume:
73
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.353375
File:
PDF, 1.16 MB
english, 1993