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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology
Griffoni, A., Chen, S.-H., Thijs, S., Linten, D., Scholz, M., Groeseneken, G.Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703483
File:
PDF, 1.16 MB
english, 2010