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[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Transverse magnetoresistance in GaAs two terminal submicron devices: A characterization of electron transport in the near ballistic regime
Hollis, M., Dandekar, N., Eastman, L.F., Shur, M., Woodard, D., Stall, R., Wood, C.Year:
1980
Language:
english
DOI:
10.1109/iedm.1980.189910
File:
PDF, 282 KB
english, 1980