Drift and Hysteresis Effects on AlN/SiO 2...

Japanese Journal of Applied Physics 2003 / 8 Vol. 42; Iss. Part 1, No

Drift and Hysteresis Effects on AlN/SiO 2 Gate pH Ion-Sensitive Field-Effect Transistor

Chiang, Jung-Lung, Chou, Jung-Chuan, Chen, Ying-Chung, Liau, Guo Shiang, Cheng, Chien-Chuan
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.4973
Date:
August, 2003
File:
PDF, 129 KB
english, 2003
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