Epitaxial Growth of AlN Film with an Initial-Nitriding...

Japanese Journal of Applied Physics 1988 / 2 Vol. 27; Iss. Part 2, No

Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α -Al 2 O 3 Substrate

Kawakami, Hiroshi, Sakurai, Katsuhito, Tsubouchi, Kazuo, Mikoshiba, Nobuo
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Volume:
27
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.27.L161
Date:
February, 1988
File:
PDF, 685 KB
1988
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