Thermal Oxidation of SiC and Electrical Properties of...

Japanese Journal of Applied Physics 1982 / 4 Vol. 21; Iss. Part 1, No

Thermal Oxidation of SiC and Electrical Properties of Al–SiO 2 –SiC MOS Structure

Suzuki, Akira, Ashida, Hisashi, Furui, Nobuyuki, Mameno, Kazunobu, Matsunami, Hiroyuki
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Volume:
21
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.21.579
Date:
April, 1982
File:
PDF, 1.37 MB
1982
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