Influence of Lattice Constants of GaN and InGaN on npn-Type...

Japanese Journal of Applied Physics 2006 / 4 Vol. 45; Iss. 4B

Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors

Makimoto, Toshiki, Kido, Takatoshi, Kumakura, Kazuhide, Taniyasu, Yoshitaka, Kasu, Makoto, Matsumoto, Nobuo
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.45.3395
Date:
April, 2006
File:
PDF, 109 KB
english, 2006
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