Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories
Puglisi, R. A., Lombardo, S., Corso, D., Crupi, I., Nicotra, G., Perniola, L., De Salvo, B., Gerardi, C.Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2359626
File:
PDF, 660 KB
english, 2006