Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
Laukkanen, P., Lehkonen, S., Uusimaa, P., Pessa, M., Oila, J., Hautakangas, S., Saarinen, K., Likonen, J., Keränen, J.Volume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1488241
File:
PDF, 491 KB
english, 2002