The passivation of InP by arsenic surface stabilization and Al2O3 deposition: Correlations between interface chemistry and capacitance measurements
G. Hollinger, R. Blanchet, M. Gendry, C. Santinelli, R. Skheyta, P. ViktorovitchYear:
1990
Language:
english
DOI:
10.1063/1.346054
File:
PDF, 1.10 MB
english, 1990