Improved interfacial and electrical properties of GaAs...

Applied Physics Letters 2013 Vol. 103; Iss. 9

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Wang, L. S., Xu, J. P., Zhu, S. Y., Huang, Y., Lai, P. T.
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Volume:
103
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4818000
File:
PDF, 1.31 MB
english, 2013
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