Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
Zhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K.Volume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4775606
File:
PDF, 1.78 MB
english, 2013