Cat-doping: Novel method for phosphorus and boron shallow...

Journal of Applied Physics 2014 / 09 Vol. 116; Iss. 11

Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

Matsumura, Hideki, Hayakawa, Taro, Ohta, Tatsunori, Nakashima, Yuki, Miyamoto, Motoharu, Thi, Trinh Cham, Koyama, Koichi, Ohdaira, Keisuke
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4895635
Date:
September, 2014
File:
PDF, 2.47 MB
english, 2014
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