Low frequency noise in 4H-SiC metal oxide semiconductor...

Journal of Applied Physics 2008 Vol. 104; Iss. 9

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

Rumyantsev, S. L., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Das, M. K., Hull, B. A.
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Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3009664
File:
PDF, 655 KB
english, 2008
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