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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
Cheng, H. Y., BrightSky, M., Raoux, S., Chen, C. F., Du, P. Y., Wu, J. Y., Lin, Y. Y., Hsu, T. H., Zhu, Y., Kim, S., Lin, C. M., Ray, A., Lung, H. L., Lam, C.Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724726
File:
PDF, 2.11 MB
english, 2013