The annealing mechanism of the radiation-induced...

The annealing mechanism of the radiation-induced vacancy-oxygen defect in silicon

Voronkov, V. V., Falster, R., Londos, C. A.
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Volume:
111
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4729323
File:
PDF, 953 KB
english, 2012
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