Infrared characterization of hafnium oxide grown by atomic...

Applied Physics Letters 2007 Vol. 90; Iss. 2

Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor

Wang, Y., Dai, M., Ho, M.-T., Wielunski, L. S., Chabal, Y. J.
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Volume:
90
Year:
2007
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2430908
File:
PDF, 605 KB
english, 2007
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