Reduction of secondary defects in MeV ion-implanted silicon...

Journal of Applied Physics 1992 Vol. 71; Iss. 8

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Wang, Zhong-lie, Zhang, Bo-xu, Zhao, Qing-tai, Li, Qi, Liefting, J. R., Schreutelkamp, R. J., Saris, F. W.
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Volume:
71
Year:
1992
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.350889
File:
PDF, 1015 KB
english, 1992
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