Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth
Polyakov, A. Y., Lee, I.-H., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Pearton, S. J.Volume:
109
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3599894
File:
PDF, 1023 KB
english, 2011