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[IEEE 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Singapore, Singapore (2012.11.21-2012.11.23)] 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Dual-metal gate AlGaN/GaN high electron mobility transistors: A theoretical study
Lee, Kean Boon, Sun, Haifeng, Yuan, Li, Wang, Weizhu, Selvaraj, Susai Lawrence, Lo, Guo-QiangYear:
2012
DOI:
10.1109/rfit.2012.6401655
File:
PDF, 197 KB
2012