Full band atomistic modeling of homo-junction InGaAs...

Applied Physics Letters 2012 Vol. 100; Iss. 6

Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

Cho, Woo-Suhl, Luisier, Mathieu, Mohata, Dheeraj, Datta, Suman, Pawlik, David, Rommel, Sean L., Klimeck, Gerhard
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Volume:
100
Year:
2012
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3682506
File:
PDF, 583 KB
english, 2012
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