Electrical properties of high energy ion irradiated 4H-SiC...

Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes

Izzo, G., Litrico, G., Calcagno, L., Foti, G., La Via, F.
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Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3018456
File:
PDF, 419 KB
english, 2008
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