Concentration profiles of As in a Ga rich solution during...

Concentration profiles of As in a Ga rich solution during electroepitaxy of GaAs using a computer simulation technique

Qhalid Fareed, R. S., Dhanasekaran, R., Ramasamy, P.
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Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.356015
File:
PDF, 845 KB
english, 1994
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