Concentration profiles of As in a Ga rich solution during electroepitaxy of GaAs using a computer simulation technique
Qhalid Fareed, R. S., Dhanasekaran, R., Ramasamy, P.Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.356015
File:
PDF, 845 KB
english, 1994