Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors
Krick, J. T., Lenahan, P. M., Dunn, G. J.Volume:
59
Year:
1991
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.105699
File:
PDF, 621 KB
english, 1991