Nitrogen-carbon radiative defect at 0.746 eV in silicon

Nitrogen-carbon radiative defect at 0.746 eV in silicon

Dörnen, A., Pensl, G., Sauer, R.
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Volume:
33
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.33.1495
Date:
January, 1986
File:
PDF, 343 KB
english, 1986
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